Ge 2p1/2
| name | Ge | unit |
| sample shape | wafer | |
| orbit | Ge 2p1/2 | |
| source | Ga Ka | |
| source energy | 9251.74 | eV |
| pass energy | 200 | eV |
| start energy (kinetic) | 7987 | eV |
| end energy (kinetic) | 8007 | eV |
| start energy (binding) | 1261.04 | eV |
| end energy (binding) | 1241.04 | eV |
| energy step | 0.2 | eV |
| dwell / point | 1 | sec |
| number of sweep | 3 | |
| mode | sweep | |
| total measurement time | 9.5 | min |
| entrance slit | 0.5 | mm |
| lens mode | transmission | |
| data points | 101 | |
| take off angle | 88 | deg |
| neutralize | ||
| comment |